A comprehensive study of 20 keV B implantations into crystalline Si is presented. B has been implanted with doses between 10(13) and 10(16) cm(-2) along the three channeling directions [110], [100], and [211] and parallel to (111) planes. In addition, implantations into (100)- and (110)-Si have been performed with tilt angles of 7 degrees and 38 degrees, respectively. The doping profiles have been measured with secondary ion mass spectroscopy. The experimental results are analyzed by Monte Carlo simulations using different models of lattice damage, thermal vibrations, and interatomic potentials. It is found that both the random interstitial and the split [110] interstitial model are adequate to describe the experimental dopant profiles, but not the tetrahedral interstitial model. Debye temperatures of 450 and 490 K both yield good results, but not 645 K. Finally, using the specific B-Si Ziegler-Biersack-Littmark (ZBL) potential or the universal ZBL potential makes little difference in most cases, but the specific B-Si clearly has to be preferred to obtain accurate [110] channeling profiles.