Three-dimensional (3D) simulations of 15 keV BF2+ implantation into (100) Si for an ion dose of 1x10(13) cm(-2) are performed using the binary collision code Crystal-TRIM. At this relatively low dose, damage accumulation during ion bombardment can be neglected. For a given area at the target surface irradiated by the ion beam and impenetrable masks, 3D range distributions can therefore be calculated by the superposition of "point response" profiles. The influence of channeling effects on the 3D boron range distribution in channeling and tilt-angle implantations are studied in detail. In addition to the simulation of 3D profiles, the depth distributions of boron and fluorine are compared with recently published experimental data.