This study presents an empirical implantation damage model on the basis of the "+ 1" model, describing the defect profile as a function of implantation energy. dose, and species. The model implies that the defect profile generated by ion implantation is very sensitive to the implantation condition especially al low doses and energies, This sensitivity is not accounted sufficiently for by the existing model, and that it can be effectively argumented by the proposed dependencies of D.PLUS. To validate the model, the extracted dependencies were applied to process and device simulations for our 0.35 mu m complementary metal-oxide-semiconductor technology. An excellent agreement between simulation and measurement was obtained in the reverse short channel effect as well as in the drain induced barrier lowering and the body effect, which indicates that both vertical and lateral profiles are accurately described by this model.