We have characterized the effect of implant parameters on the characteristics of boron-implanted silicon prepared by plasma doping. The thickness of the amorphous layer was monitored using Rutherford backscattering spectrometry, transmission electron microscopy, and double crystal x-ray diffraction. At low plasma implant pulse biases (2 kV), both dose rate and pulse repetition rate (10 Hz to 1 kHz) were found to have a negligible effect on the generation of the surface amorphous layer. At higher voltages (5 kV), the thickness of the amorphous layer increased with the pulse repetition rate but was apparently not sensitive to the dose rate. The sheet resistance after annealing correlated strongly with the increasing thickness of the surface amorphous layer formed at 5 kV. From these results, we conclude that an increase in pulse repetition rate has a stronger effect on the formation of the surface amorphous layer than does dose rate.