Conditions for TiC epitaxial growth on 6H alpha-SiC and beta-SiC surfaces were established. The TiC epilayer defect structures and TiC/SiC interface properties were investigated in TiC/(0001)-6H alpha-Sic, TiC/(111)-beta-SiC and TiC/(110)-beta-SiC structures. The TiC/SiC interfaces - annealed at 1300-1400 degrees C - remained flat and free of titanium silicides. Threading dislocations were the only defects observed in TiC epilayers grown on (0001) 6H alpha-SiC. Microtwins and DPBs formed in TiC epilayers grown on (110) beta-SIC were propagated only from similar defects present in the substrate.