Depths and cross sections of traps for charge carriers, associated with the presence of dipolar defects in highly anisotropic (quasi-one-dimensional) molecular solids were calculated employing a simple electrostatic model. The parameters of trapping centres are linearly dependent on the magnitude of the dipole moment. The field dependence of the cross sections and the depths of the dipolar traps, particularly pronounced at elevated fields, may account for high-field effects, observed in transport experiments performed on single-crystalline polydiacetylenes.