The free-exciton series with n = 1,2 in high perfect CuInSe2 and CuGaSe2 single crystals have been observed in photoluminescence. The exciton binding energy and direct energy gap are estimated as 9.5 meV and 1.7305 eV at 4.2 K for CuGaSe2. New values are determined for the band gap energy E-g = 1.0459 eV and for the excitonic binding energy 5.1 meV in CuInSe2 at 4.2 K. The temperature dependence of the n = 1 excitonic line between 4.2 and 300 K have been studied.