The valence band spectrum of a Te-C:H film was found to be essentially the same as that of amorphous elemental tellurium using X-ray photoelectron spectroscopy. Raman and Fourier transform far-IR spectra were examined based on the phonon density of states for tellurium, and the far-IR peak corresponding to the vibration of amorphous tellurium was identified at 150 cm(-1). Organic Te-C bonding was found in the Te-C:H film, and the origin of this bonding is discussed by taking into consideration the deposition process, including surface reaction on the tellurium target. The chemical sputtering process is suggested to contribute to the deposition of Te-C:H film.