InSb thin films with excess antimony were prepared on mica substrates by vacuum evaporation, and their morphology and electrical properties were investigated. Thin films which were coevaporated with more than 4% antimony showed p-type conduction. The electrical properties of p-type films were investigated in relation to the amount of excess antimony. As the amount of excess antimony was increased, the impurity concentrations increased and the electron and hole mobilities decreased. From the X-ray diffraction patterns, the films were found to have the InSb-In crystalline structure owing to the segregated indium. A decrease in indium inclusions was observed as the amount of excess antimony was increased.