Nickel films have been grown on synthetic type Ib diamonds. The films prepared under ultra high vacuum conditions by electron-beam evaporation were characterized by X-ray diffraction, reflection high-energy electron diffraction, low-energy electron diffraction, scanning electron microscopy, Nomarski microscope and Talystep profilometer. Epitaxial growth was found even at a 25 degrees C substrate temperature, in contrast to the literature (R.J. Caveney et al., Diamond Research, Industrial Diamond Information Bureau, London, 1971, p. 20) where an epitaxy temperature of 205 degrees C is reported. Below 300 degrees C the films grow in a two-dimensional mode.