The dependence of the structural and electrical properties of laser-deposited zinc oxide thin films on the deposition parameters are studied using resistivity measurements and X-ray diffraction. The depositions were carried out at different substrate temperatures (T-sub) in mixed oxygen-argon and pure oxygen ambients on silicon and glass substrates. To obtain high-conducting ZnO films, the depositions were also carried out at different hydrogen ambient pressures. At room temperature we could achieve the resistivity of "reduced ZnO" upto the range of 10(-3) Omega cm. The activation energies were studied in the low-temperature region for different reduced films and these were found to be in the range of 0.017 to 1 x 10(-3) eV.