Deep level transient spectroscopy measurements have been performed on SiGe/Si HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. Deep electron traps located near the emitter-base junction have been detected with an apparent activation energy around 0.6 eV and a capture cross-section of 10(-17) cm(2). A detailed study of this DLTS signal has been carried out as a function of reverse and filling voltages, filling pulse duration and junction geometry. The origin of the DLTS signal is then discussed on the basis of process-induced defects at the periphery of the emitter-base junction, this attribution being supported by a previous study of the leakage current in these devices.