Carbon nitride thin films have been prepared by plasma enhanced chemical vapour deposition of CH4 and N-2 gas mixtures, by chemical transport from a hollow graphite cathode. The deposits prepared on pieces of single crystal silicon substrates were characterised using FTIR, Raman, SEM, EDX, SIMS, X-ray and electron diffraction. Single, double and triple carbon nitrogen bonds were detected in the FTIR spectra : the relative intensities of the associated bands being a function of the plasma power and substrate bias. Elemental analysis of the deposit showed that the nitrogen content was similar to 57 at%. A polycrystalline deposit identified as hexagonal beta-C3N4 was obtained at low substrate temperatures. The deposit was found to grow preferentially on scratch defects on the silicon substrate surface and was stable upon annealing under vacuum up to 700 degrees C.