Carbon nitride films were synthesized using a novel technique based on the pulsed high voltage ion/electron diode with explosive emission (pulsed voltage 200-700 kV pulsed current 100-500 A cm(-2) (ions) 150-2000 A cm(-2) (electrons)). The method and its novel features are discussed as well as its application to the formation of the crystalline beta-phase in C3N4 films. Mixed elemental nitrogen and carbon films are formed by sequential deposition then subjected to ion and/or electron beam mixing to synthesize the C3N4 structure. The experimental conditions used for this pulsed process are described and the efficiency of the method for nitro Pn incorporation is demonstrated. The results presented indicate that beta-C3N4 crystallites are formed in an amorphous matrix.