HgCdTe thin films have been obtained on the Al2O3 surface by the pulse laser deposition method in dynamic vacuum. Films grown at the temperature window of 470-490 K exhibit relatively small electrical resistance. The resistance-temperature characteristics of the films are compared to those of the target and they clearly point to intrinsic and impurity regions. The temperature dependency of the Hall coefficient, the stationary and kinetic photoconductivity of the layers as well as the life time of charge carriers have been studied.