Thin Solid Films, Vol.336, No.1-2, 191-195, 1998
The growth kinetics of Si1-xGex layers from SiH4 and GeH4
In this paper we introduce a kinetic model of growth from silane and germane at low pressures. The stationary and non-stationary growth kinetics have been studied both in the presence of 'hot wires' and in their absence.