By laser ablation using ArF excimer laser, CuIn(SxSe1-x)(2) thin films were prepared from powder targets which were previously mixed from binary compounds. From X-ray diffraction analyses, these films had a chalcopyrite structure with strong orientation to (112) plane. As the sulfur content x in the thin film increases, the peaks shift to a higher angle. From scanning electron microscope images, the grain sizes in the thin films decrease in the case of mixed crystals. Optical transmittance measurements shows that the band gap of the thin films increases linearly with increasing the sulfur content x.