Preparation of Ferroelectric Pb(Zr-0.52 Ti-0.48)O-3 Thin Films by Sol-Gel Processing

Kyung Won Seo; Sung Hyun Cho; Seung Ho Lee

Korean Journal of Chemical Engineering, Vol.18, No.1, 75-80, January, 2001

DOI10.1007/BF02707201 Export Citation

Preparation of Ferroelectric Pb(Zr-0.52 Ti-0.48)O-3 Thin Films by Sol-Gel Processing

Kyung Won Seo^†, Sung Hyun Cho, and Seung Ho Lee¹

School of Chemical Engineering & Biotechnology, Ajou Univ., Suwon 442-749, Korea
¹Korea Institute of Ceramic Engineering and Technology, Seoul 153-023, Korea

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Ferroelectric Pb(Zr(0.52)Ti(0.48))O-3 thin films were prepared by sol-gel processing on the Pt/Ti/SiO2/Si(100) substrates. Effects of the concentration (0.2-0.8 M) of the starting solution (Pb/Zr/Ti=1.1/0.52/0.48) and the sintering temperature (500-700 ℃) on crystallinity, microstructure and electrical properties of PZT thin films were investigated. For the thin film prepared at 0.4 M starting solution, the highest crystallinity appeared at a sintering temperature of 650 ℃. The average grain size of the PZT thin films was about 0.17 μm. The film thickness was about 0.2 mum. The relative dielectric constant and the dissipation factor of the film measured at 1 kHz were about 750 and 4.3%, respectively. The remnant polarization (Pr) and coercive field (Ec) of the film measured at the applied voltage of 5 V were about 49 μC/cm(2) and 134 kV/cm, respectively.

Keywords:Ferroelectric;Thin Films;Sol-Gel Processing;PZT;Perovskite Phase;Relative Dielectric Constant;Dissipation Factor

[References]

Amanuma K, Mori T, Hase T, Sakuma T, Ochi A, Miyasaka Y, Jpn. J. Appl. Phys., 32(1), 4150 (1993)
Brinker CJ, Scherer GW, "SOL-GEL Science," Academic Press Inc. 47 (1990)
Caruso R, de Sanctis O, Frattini A, Steren C, Gil R, Surf. Coat. Technol., 122, 44 (1999)
Chang CC, Chen KH, J. Mater. Sci., 10, 551 (1999)
Chung CW, Kim D, Korean J. Chem. Eng., 14(2), 136 (1997)
Haerting GH, J. Vac. Sci. Technol., A9(3), 414 (1991)
Iijima K, Ueda I, Kugimiya K, Jpn. J. Appl. Phys., 30(9B), 2149 (1991)
Jeon BS, Yoo JS, Korean J. Chem. Eng., 15(1), 85 (1998)
Jin YG, Lee SY, Nam YW, Lee JK, Park D, Korean J. Chem. Eng., 15(6), 652 (1998)
Kim SH, Choi YS, Kim CE, J. Mater. Res., 12(6), 1576 (1997)
Kim YM, Lee WJ, Kim HG, Thin Solid Films, 279(1-2), 140 (1996)
Klee M, Eusemann R, Waser R, Brand W, J. Appl. Phys., 72, 1566 (1992)
Krupanidhi SB, Maffei N, Sayer M, El-Assal K, J. Appl. Phys., 54, 6601 (1983)
Lee C, Spirin V, Song H, No K, Thin Solid Films, 340(1-2), 242 (1999)
Meidong L, Chrunru L, Peiying W, Yunha R, Yike Z, Churong L, Sensors Actuators, A49, 191 (1995)
Seo KW, Kong HG, Korean J. Chem. Eng., 17(4), 428 (2000)
Seo KW, Kong HG, Korean J. Chem. Eng., 17(4), 455 (2000)
Sreenivas K, Sayer M, J. Appl. Phys., 64, 1484 (1988)
Takayama R, Tomita Y, J. Appl. Phys., 65(4), 1666 (1989)
Yi G, Wu Z, Sayer M, J. Appl. Phys., 64(5), 2717 (1988)

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[3] Caruso R, de Sanctis O, Frattini A, Steren C, Gil R, Surf. Coat. Technol., 122, 44 (1999)

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