Bulk material of 3C-SiC was grown using a conventional Floating Zone arrangement with aspects of the THM process. Feeding and growing part were made of graphite or sintered SiC rods for the first runs. Silicon has been used as solvent, High temperature gradients in the molten zone and in the vicinity of the growth interface can be assumed because of the applied induction heating. Marangoni and electrodynamic convection give rise to complete mixing of the molten zone consequently The influence of complete mixing on the transport rate from feeding rod to the growing rod has been studied. The observed average growth rates in the 0.1-0.4mm h(-1) range were comparable to the corresponding values of vapour growth. Diffusion is not a limiting factor for the growth rate in this system.