Growth of homoepitaxial layers has been performed by chemical vapor deposition on 6H SiC spheres ground from modified Lely crystals. We used such a sphere as substrate which provides naturally all crystallographic orientations in order to obtain an overview over the homoepitaxial growth in different directions. From scanning electron micrographs we could determine 6 pronounced crystallographic bands running from the (0001) Si pole to the (000 (1) over bar) C pole along <1 (1) over bar 0x > directions. Around the (0001) Si and (000 (1) over bar) C poles smooth growth planes have developed. The bands show a stair-like character consisting of treads and risers with surface normals parallel to the <1 (1) over bar 00 >- and < 11 (2) over bar0 > -directions, respectively. Between the bands a rough topology consisting of terraces is observed. Concerning the growth rates of the different directions we find the < 11 (2) over bar0 > as the fastest, followed by <1 (1) over bar 00 >. The (000+1) planes grow slowest.