Aspects of step flow growth for various SiC(111) polytypes are described using a dangling bond formulation of a surface kinetics model. Differences in the dangling bond dispersion at the step riser "growth" sites are used to predict the variability in the step flow growth rates with flow direction. Step flow growth on a (111) plane in < 1120 > directions is faster than growth in < 1100 > directions. There is also step now growth rate variability among the < 1100 > directions as a consequence of the characteristic triangular and hexagonal morphologies seen when growing SiC(111). Step bunching is shown to be due in part to the growth rate variability of < 1100 > directions and the hexagonal stacking content in the alpha -SiC polytype.