Increase in the forward current density in SiC Schottky diodes with field-plate edge termination is reported for the first time. The forward current density for a given forward bias is 2-3 times higher and the reverse breakdown voltage is similar to 2 times higher for Schottky diodes with field-plate edge termination as compared to unterminated Schottky diodes with a similar Schottky contact area. A possible model to explain the higher forward current density in Schottky diodes with edge termination is proposed based on the formation of an accumulation layer underneath the oxide layer resulting in lateral current spreading under forward bias.