We report here a photoluminescence (PL) study of AlAsSb/InGaAs/AlAsSb single quantum wells (SQWs) that are lattice-matched to InP substrates grown by molecular beam epitaxy (MBE). The group V species used, the interface termination procedures, and Si doping are shown to markedly influence the PL spectra of the SQWs: (1) the undoped SQWs grown using dimer group V species combined with As interface termination show sharp PL spectra, which correspond to a direct transition between the confined electrons and holes of InGaAs; (2) the PL peak is broadened and shifted towards a longer wavelength as a result of Sb interface termination; and (3) when the AlAsSb or InGaAs layers are highly doped to 1 X 10(19) cm(-3), the PL spectra become very broad. These results are most probably attributable to the enhanced exchange reaction between As and Sb, and also to the diffusion of In and Ga at the interfaces resulting from Si high doping and the use of tetramer group V species.