TiN (4.5 nm)/AIN (3, 6, 22 nm) superlattices deposited by DC magnetron sputtering on MgO(001) at a temperature of 850 degreesC exhibit Raman signals. They indicate N and Ti vacancies (as in thick TiN) in TiN1-x layers (x = 3 +/- 2%). x is higher for the sample with 3-nm thick AIN layers, which is ascribed to N diffusion from AIN (standing close to the TiN interfaces) to TiN. In comparison to Raman peaks of thick ALN, there are split signals of wurzite ALN phase, and a signal from another phase, which might be defective rocksalt AIN standing close to the TiN interfaces. The Raman signals clearly show interactions between ALN and TiN layers.