Chromium silicide formation from chromium/amorphous silicon multilayer thin films was investigated using differential scanning calorimetry (DSC) and transmission electron microscopy (TEM). The chromium and amorphous silicon thin films were RF sputtered without breaking the vacuum onto unheated monocrystalline NaCl substrates at a deposition rate of similar to 1 Angstrom /s. The nominal ratio of the layer thicknesses, silicon-to-chromium, was approximately 3.3:1. The thermograms, realized at two different scanning rates between room temperature and 600 degreesC, revealed a small peak at similar to 300 degreesC and a strong peak at similar to 500 degreesC. The TEM investigation showed that the small and the main DSC peaks were attributed to the nucleation of the CrSi2 phase and the growth of the same phase, respectively.