In our previous report [Thin Solid Films 281-282 (1996) 232], we designed a new spectral selective radiating material (SSRM) which consists of an SiO film as outer layer, a V1-xWxO2 thermochromic (TC) film as intermediate layer and blackbody as the substrate, respectively. This SSRM can attain a stable surface temperature that can be controlled by varying the value of x of V1-xWxO2, namely the transition temperature, T-c from the metal to semiconductor phase. In this paper, we report deposition of a SiO him on a V1-xWxO2 film on glass substrate and its LR spectral reflectance at lower and higher temperature than T-c. We also report an estimated radiative cooling power of the SSRM based on the measured IR spectral reflectance and a discussion concerning the temperature stability of the SSRM.