Crystalline poly-Si thin films were deposited on Coming glass substrates at a temperature of 500 degreesC using a pulsed d.c. magnetron sputtering source. The increased bias voltage causes an enhancement of the potential difference between the plasma and substrate. In case of the bipolar pulsed d.c. magnetron sputtering, V-p shows higher value than that in the unipolar pulsed d.c. as the bias voltage increases. Therefore, the mobility of the sputtered adatoms increases by the surface heat accumulation of energetic sputtered particles with the increased bias voltage. Consequently, more higher mobility (41 cm(2) Vs(-1)) and crystallinity were obtained for the Si film grown with the bipolar-pulsed d.c. magnetron sputtering due to the energy incorporation by enhanced bombardment of Ar ions.