Thin Solid Films, Vol.420-421, 433-437, 2002
Dependence of working gas pressure and ratio of Ar to O-2 on properties of TiO2 films deposited by facing targets sputtering
TiO2 films with thickness of 300-4000 nm have been reactively deposited on glass-slide substrates at an atmosphere of Ar and O-2 mixture, using the facing targets sputtering. Maximum deposition rate of the film was 13.3 nm/min. The crystal structure, the surface morphology, and the optical properties of films were estimated using X-ray diffractometry, atomic force microscopy, and spectrophotometer, respectively. Most of the films deposited for this study showed a transparency and had anatase crystal structure, while some of them showed semitransparency because of dim surface. When TiO2 films were deposited with plasma exposure, four peaks of A(1 1 2), A(2 0 0), A(2 1 1) and A(2 2 0) were observed from the X-ray diffraction patterns, where A shows an anatase of TiO2. On the other hand, two peaks of A(1 0 1) and A(2 0 0) were observed in TiO2 films deposited with weak plasma exposure. The peak intensities of A(2 2 0) and A(1 0 1) decreased with increasing working gas pressure P-W in the range of 0.13-1.07 Pa. The crystal orientation significantly depends on the degree of plasma exposure and P-W. In TiO2 films deposited at P-W of 0.13 Pa with plasma exposure, the optical transmittance spectrum monotonically decreased with decreasing the wavelength from 700 to 350 nm. However, the changes in transmittance spectra of films deposited at various P-W with weak plasma exposure were small. The surface of as-deposited TiO2 films became rough with an increase of plasma exposure and a decrease of P-W. The X-ray diffraction peak of (2 2 0) and the deposition rate of TiO2 films deposited with strong plasma exposure increased with increasing the ratio of Ar to O-2. Consequently, it was found that crystal structure, surface morphology, and optical properties of as-deposited TiO2 films were strongly affected by the working gas pressure, and the ratio of Ar to O-2.