The stress-induced migration phenomenon is one of the problems related to the reliability of metal interconnections on semiconductor devices. The phenomenon causes voids and fractures to occur in the interconnections when the semiconductor devices are maintained at a high temperature for long periods. The purpose of this study is to theoretically clarify the temperature characteristics of the phenomenon. First, the residual thermal stress and the vacancy concentration in the interconnection with a slitlike void were calculated based on fundamental discussions on the residual thermal stress and the vacancy concentration in the interconnection without voids. Next, the vacancy flux to the slitlike void was considered at various temperatures. The theoretical results reveal that the temperature characteristic of the vacancy flux has a peak at a certain temperature which changes due to stress relaxation. Therefore, the temperature facilitating easy void formation shifts to a lower value with void expansion. Finally, the results of the theoretical analyses were compared with the results of high-temperature storage tests of samples. The theoretical results qualitatively agree with the results of the tests. (C) 2003 American Vacuum Society.