Several methods have been used to prepare ferroelectromagnetic BiFeO3 films. In this paper, we adopted a sol-gel process to fabricate BiFeO3 films on indium tin oxide (ITO)/glass substrates. X-ray diffraction pattern indicated that the samples are randomly oriented. Cross section scanning microscopy showed that the thicknesses of both films were about 1.2 mu m and no apparent diffusion between the BiFeO3 films and ITO/glass substrates. Remnant polarization of 2,0 and 1.75 mu C/cm(2) were identified by the measuring of electric hysteresis loops for the films annealed at 500 and 600 degrees C respectively at an applied field of 108 kV/cm. Dielectric property and loss factor were investigated as a function of frequency. In addition, magnetism was detected at 77 K. (c) 2005 Elsevier B.V. All rights reserved.