SiNx films without absorption in visible range were prepared using a gaseous mixture of SiH4, NH3 and H-2 with a deposition rate of 110 nm/min, keeping the Substrate temperatures below 80 degrees C. These high-rate SiNx films were subjected to pressure cooker test (PCT) at 121 degrees C, 100% relative humidity (RH), 2 atm for 24 h. No oxidation for SiNx films was observed even after PCT. Film stress was measured by surface profilometry. Stress for these high-rate SiNx film is below 40 MPa. From these results, it is concluded that highly moisture resistive, low stress and transparent SiNx films can be prepared by Cat-CVD with deposition rates faster than 100 nm/min, which appears to satisfy industrial requirements. (c) 2006 Elsevier B.V. All rights reserved.