We discuss a method for fabricating strained Si layers via deposition directly onto planarized relaxed SiGe virtual substrates, a process termed direct regrowth (DRG). We show that a trade-off exists between surface roughness and cleanliness of the Si/SiGe interface. Using this knowledge, we discuss process requirements to ensure that strained Si wafers produced via direct regrowth are free of interfacial contamination, exhibit ultra-low surface roughness, and feature abrupt Si/SiGe interfacial transitions. Finally, we show that metal-oxide-semiconductor field-effect transistors produced on strained Si channels fabricated via direct regrowth exhibit excellent device performance, suggesting the viability of the DRG process for manufacture of high quality strained Si wafers. (c) 2006 Elsevier B.V. All rights reserved.