We have greatly reduced the formation of double-positioning boundaries (DPBs) in cubic silicon carbide (3C-SiC) epitaxial films. The films are fabricated on Si (111) substrates using the pulsed-laser deposition method. The reduction in DPBs is achieved by a conventional Surface cleaning method, using hydrogen peroxide solutions for the silicon substrate. and by extra care. Pole figure measurements by X-ray diffraction and reflection high-energy electron diffraction measurements revealed that the formation of DPBs was minimal. These Successes in creating 3C-SiC films with fewer defects could be applied to the formation of a buffer layer for wide band gap semiconductors with a hexagonal crystal structure, such as gallium nitride. (c) 2006 Elsevier B.V. All rights reserved.