The etching properties of tantalum carbide (TaC) in inductively coupled Ar/HBr/Cl-2 plasmas are investigated in this article. Both etching experiments on patterned and blanket wafers and an integrated plasma equipment-feature scale computational model are utilized in this investigation. Results show that TaC etching is adequately described by the classical reactive ion etching mechanism, whereby etching occurs due to the synergistic effect of Cl or Br atoms and energetic ions. TaC etches faster in the presence of Cl relative to Br. The TaC etch rate is small in gas mixtures containing 5% of Cl-2 or HBr and 95% of Ar, and it increases considerably as Cl-2 or HBr concentration is increased. Although this etch rate increase is partially due to the availability of more Cl or Br, the chemical nature of chlorine (Cl-2(+),Cl+) or bromine (Br) ions also plays a strong role. 2 The TaC etch rate increases little if Cl-2 or HBr fraction in Ar/Cl-2 or Ar/HBr gas mixture, respectively, is increased beyond 25%. The TaC etch rate increases with rf bias power under all conditions. Scanning electron micrographs of TaC films etched using a patterned mask show that TaC sidewalls are tapered at about 77 degrees +/- 3 degrees and the angle does not change appreciably with gas mixture or rf bias power. It is determined that an angle dependent ion etching yield captures well the observed trends in TaC sidewall slope. (c) 2006 American Vacuum Society.