화학공학소재연구정보센터
Journal of the American Ceramic Society, Vol.87, No.6, 1153-1156, 2004
Direct characterization of grain-boundary electrical activity in doped (Ba0.6Sr0.4)TiO3 by combined Imaging of electron-beam-induced current and electron-backscattered diffraction
Simultaneous measurements of remote electron beam induced current (REBIC) and orientation imaging microscopy (OIM) in a scanning electron microscope (SEM) have been applied to a polycrystalline (Ba0.6Sr0.4)TiO3 with a positive temperature coefficient of resistivity (PTCR) to elucidate a grain-boundary character dependence of the potential barrier formation. The absence of electrical activity in a coherent Sigma3 twin boundary is clearly imaged. The resistivity of individual grain boundaries estimated from a resistive contrast image is interpreted in terms of geometrical coherency, which is defined by the degree of coincidence in the reciprocal lattice points.