Journal of Crystal Growth, Vol.212, No.3-4, 601-604, 2000
Growth of InxGa1-xAs layers with pyramidal morphology on (100)GaAs patterned substrates by liquid-phase epitaxy
Liquid-phase epitaxial growth of InxGa1-xAs (x = 0.6) layers on various types of patterned (1 0 0)GaAs substrates was investigated. Non-planar InGaAs layer having filled tent-like structure was grown on non-patterned substrate. When the InGaAs was grown on circular-patterned substrate, a non-hollow pyramid structure was obtained. Perfect hollow pyramid structured InGaAs was found to be grown on trench substrates of (1 0 0)GaAs.