Chemical composition of InxGa1-xAs epilayers grown simultaneously on differently oriented GaAs substrates

De Caro L; Giannini C; De Riccardis MF; Nacucchi M; Tapfer L; Hey R; Daweritz L; Ploog KH

Journal of Crystal Growth, Vol.223, No.4, 494-502, 2001

DOI10.1016/S0022-0248(01)00683-2 Export Citation

Chemical composition of InxGa1-xAs epilayers grown simultaneously on differently oriented GaAs substrates

De Caro L, Giannini C, De Riccardis MF, Nacucchi M, Tapfer L, Hey R, Daweritz L, Ploog KH

We investigate the In-composition of InxGa1-xAs ternary layers epitaxially grown by molecular beam epitaxy. The epilayers of different indium content (mole fraction 0.2

Keywords:X-ray diffraction;molecular beam epitaxy;semiconducting III-V materials