Bi3Ti2O7 thin films were successfully prepared on n-type Si(1 0 0) substrate by using chemical solution decomposition (CSD) technique followed by rapid thermal annealing (RTA), The structural properties were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The dielectric properties of the films were evaluated. The leakage current density of Bi2Ti2O7 thin films is of the order of 10(-7) A/cm(2) when the applied voltage is between -18 and + 18 V, It is much lower than that of films treated by normal thermal processing. The dielectric constant varies from 159 to 150 within the frequency range of 10-100 KHz, while the dissipation factor is lower than 0.02 in this range.