Ge(mnn) surfaces between (100) and (111) were annealed under either arsine or phosphine in a metal-organic chemical vapor deposition chamber, then imaged with a scanning tunneling microscope. In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain Rat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (1 0 0), (1 1,3, 3), (9 5 5), and (1 1 1).