In this paper we present a study on the MOVPE growth and optical evaluation of strained InGaAs/GaAs quantum well (QW) structures with In contents of 17% and 22% on [111]A-oriented GaAs substrates. QW structures grown under different growth conditions were extensively analyzed by means of Photoluminescence (PL) spectroscopy. The dependence of the PL intensity and linewidth on the growth temperature and In content an investigated and compared to simultaneously grown [100]-oriented structures. It is shown that excellent QW interfaces with only +/- (1-2) monolayer roughness were achieved for the [1 1 1]A-oriented structures with 17% In using a wide range of growth temperatures (550-670 degreesC), whereas the interfacial properties of the [1 0 0] samples significantly degraded as the growth temperature was increased. For a [1 1 1]A QW structure with 22% In the PL characteristics are similar to those obtained for the 17% In sample; on the contrary, for the companion [1 0 0] sample a strong degradation of its optical properties is observed.