CoSi2 buried layers were synthesized by implantation of Co into Si (100) substrates at different substrate temperature with a metal vapor vacuum arc ion source. theta - 2theta X-ray diffraction patterns showed that these buried layers had a strong (10 0) preferred orientation at low temperature of substrate. Rutherford backscattering spectrometry and four-point probe measurement showed that the substrate temperature has a significant influence on the crystallinity and electrical properties Of CoSi2 buried layers. (C) 2004 Elsevier B.V. All rights reserved.