BxAl1-xN epitaxial growth on the SiC substrates by plasma-assisted molecular beam epitaxy was investigated. B atoms were supplied by pyrolysis of decaborane (B10H14). The maximum B composition of single-phase BxAl1-xN layers was 1.8%. The surface roughness of BxAl1-xN layers was increased with increasing B composition. Twodimensionally grown BxAl1-xN layer was obtained up to x = 0.7%. © 2005 Elsevier B.V. All rights reserved.