Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

Feduniewicz A; Skierbiszewski C; Siekacz M; Wasilewski ZR; Sproule I; Grzanka S; Jakiela R; Borysiuk J; Kamler G; Litwin-Staszewska E; Czernecki R; Bockowski M; Porowski S

Journal of Crystal Growth, Vol.278, No.1-4, 443-448, 2005

DOI10.1016/j.jcrysgro.2005.01.004 Export Citation

Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

Feduniewicz A, Skierbiszewski C, Siekacz M, Wasilewski ZR, Sproule I, Grzanka S, Jakiela R, Borysiuk J, Kamler G, Litwin-Staszewska E, Czernecki R, Bockowski M, Porowski S

We studied the influence of the growth temperature and Mg flux on the morphology, polarity inversion and p-type conductivity in GaN:Mg layers grown by plasma-assisted molecular beam epitaxy (PAMBE). Polarity-dependent wet etching, secondary ion mass spectroscopy and transmission electron microscopy are used to determine the polarity inversion of heavily M.-doped GaN layers. Phase diagram for polarity inversion effect as a function of substrate temperature and Mg flux is presented. The maximum hole concentration measured in Hall effect experiments is 5 x 10(17) cm(-3) for Mg concentration of 10(20) cm(-3). © 2005 Elsevier B.V. All rights reserved.

Keywords:doping;molecular beam epitaxy;semiconducting III-V materials