Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

Kawashima T; Nagai T; Iida D; Miura A; Okadome Y; Tsuchiya Y; Iwaya M; Kamiyama S; Amano H; Akasaki I

Journal of Crystal Growth, Vol.298, 261-264, 2007

DOI10.1016/j.jcrysgro.2006.10.096 Export Citation

Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

Kawashima T, Nagai T, Iida D, Miura A, Okadome Y, Tsuchiya Y, Iwaya M, Kamiyama S, Amano H, Akasaki I

We succeeded in growing low-defect-density GaN and Al0.18Ga0.82N on a grooved m-plane GaN by optimizing growth conditions. A reduction in the density of dislocations was confirmed by cross-sectional transmission electron microscopy (TEM). m-Plane GaN having an atomically flat surface was successfully grown. An improvement in the luminescence intensity of GaN and Al0.18Ga0.82N was confirmed by photoluminescence (PL) and cathodoluminescence (CL) measurements. (c) 2006 Elsevier B.V. All rights reserved.

Keywords:organometallic vapor phase epitaxy;selective epitaxy;nitrides