Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices

Iida K; Kawashima T; Iwaya M; Kamiyama S; Amano H; Akasaki I; Bandoh A

Journal of Crystal Growth, Vol.298, 265-267, 2007

DOI10.1016/j.jcrysgro.2006.10.026 Export Citation

Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices

Iida K, Kawashima T, Iwaya M, Kamiyama S, Amano H, Akasaki I, Bandoh A

Crack-free and low-dislocation-density AlxGa1-xN with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate. Efficient UV-B-light-emitting diodes can be fabricated on such an AlGaN layer. (c) 2006 Elsevier B.V. All rights reserved.

Keywords:heteroepitaxial lateral overgrowth AlGaN;metal-organic vapor phase epitaxy;AlGaN;UV-light-emitting diode