It is demonstrated that single crystal ZnO films can be grown on Si (I 1 1) substrates using a GaN (0 0 0 1) interlayer, as confirmed by X-ray diffraction (XRD) and transmission electron microscopy observation. Photo luminescence spectra of the ZnO films exhibited sharp and intense emission with line width of 155 meV at room temperature and 29 meV at 12 K. High resolution XRD measurement showed (0 0 0 4) peak with full-width at half-maximum value of about 230 arcsec. These results are comparable with previously reported values from ZnO/Al2O3 films grown by metalorganic chemical vapor deposition and represent significant improvement over the characteristics of the ZnO films directly grown on Si. (c) 2007 Elsevier B.V. All rights reserved.