Applied Surface Science, Vol.159, 197-200, 2000
Characterization of the buried interface in a Ni (film) /3C-SiC (substrate) system using SXES
We investigated the interface reaction between Ni (film) and 3C-SiC (substrate) after heat treatment by soft X-ray emission spectroscopy (SXES). Si atoms were found to react with Ni atoms at the interface by heat treatment at 600-800 degrees C. The reacted product was identified as Ni2Si. Carbon atoms are concluded to be in a graphite-like state in the reacted film from the spectral shape of the CKalpha. Those carbon atoms were found to be distributed around the interface region.