Hydrogen termination of silicon dangling bonds is a useful method in large-scale integrated circuit (LSI) technology. In the present study, a two-dimensional (2D) hydrogen analyzer has been developed using an electron-stimulated desorption (ESD) method. A result of 2D hydrogen analysis revealed a spatial resolution of 700 nm under the optimal condition. Hydrogen termination has been applied to heteroepitaxial growth of a Ni-silicide system on the H-terminated Si(100) surface using a scanning tunneling microscope (STM). The H-terminated surface formed a sharp interface between the silicide and the substrate.