The epitaxial growth of cubic-silicon carbide (SiC) on Si substrates was carried out by triode plasma CVD using dimethylsilane (DMS) as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by applying negative grid bias and adding bypass condensers between cathode and grid electrode. The substrate temperature was rapidly raised from 500 degrees C to the growth temperatures in the flow of hydrogen and DMS, followed by the epitaxial growth. By this growth procedure, the SiC films with good surface morphology were grown.