The collector-emitter offset voltage of GaInP/GaAs HBTs grown by chemical-beam epitaxy with reduced toxicity precursors is investigated for Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector contact metals. The offset voltage for HBTs with Ti/Pt/Au collector metal is increased by 0.26 V compared to Ni/Ge/Au/Ti/Au due to the 0.26 eV barrier existing between the n-GaAs subcollector and the Ti/Pt/Au contact metal. Other parameters affected by the collector contact barrier and impacting transistor performance include DC gain, microwave and power performance.